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ON THE DISTRIBUTION OF RECOIL MOMENTA IN A COLLISION CASCADE.SANDERS JB; ROOSENDAAL HE.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 24; NO 3; PP. 161-172; BIBL. 9 REF.Article

DEFECT CREATION IN ELECTRONIC RESEARCH.CHENG LJ; CORBETT JW.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 9; PP. 1208-1214; BIBL. 1 P. 1/2Article

NEW EPR SPECTRA IN NEUTRON-IRRADIATED SILICON(II).LEE YH; BROSIOUS PR; CORBETT JW et al.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 22; NO 3; PP. 169-172; BIBL. 16 REF.Article

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A KINETIC THEORY FOR THE ANNEALING OF RADIATION DAMAGE IN GERMANIUM.PRITCHARD WM; REID JL.1974; NUCL. SCI. ENGNG; U.S.A.; DA. 1974; VOL. 55; NO 1; PP. 11-16; BIBL. 6 REF.Article

CHARGE-STATE EFFECTS ON ANNEALING OF ELECTRON-IRRADIATED SILICON.DEANGELIS HM; DIEBOLD JW; KOMM DS et al.1974; AIR FORCE CAMBRIDGE RES. LAB., PHYS. SCI. RES. PAPERS; U.S.A.; DA. 1974; NO 593; PP. 1-31; BIBL. 10 REF.Article

Atomic displacement and total ionizing dose damage in semiconductorsBRÄUNIG, D; WULF, F.International journal of radiation applications and instrumentation. Part C, Radiation physics and chemistry. 1994, Vol 43, Num 1-2, pp 105-127, issn 1359-0197Article

Cascade characteristics and defect productionGHONIEM, N; KIRITANI, M.Journal of nuclear materials. 1991, Vol 179-81, Num B, pp 1201-1212, issn 0022-3115Conference Paper

Effets d'irradiation dans les verres par excitation électronique = Electronic-excitation induced radiation damage in glassesVIGOUROUX, J. P.Annales de chimie (Paris. 1914). 1985, Vol 10, Num 5, pp 515-519, issn 0151-9107Article

Etude en dynamique moléculaire des défauts créés par irradiation dans la silice vitreuse = Molecular dynamics study of irradiation defects in vitreous silicaDOAN, N. V.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1984, Vol 49, Num 5, pp 683-687, issn 0141-8610Article

Rôle des défauts du type «lacune d'oxygène» dans la formation de centres d'irradiation colorés dans des verres de quartzAMOSOV, A. V; MALYSHKIN, S. F.Fizika i himiâ stekla. 1984, Vol 10, Num 3, pp 305-310, issn 0132-6651Article

An experimental estimation of the vacancy formation energy in diamondBOURGOIN, J. C.Radiation effects. 1983, Vol 79, Num 1-4, pp 235-239, issn 0033-7579Article

Continuum modeling of localized deformation in irradiated bcc materialsPATRA, Anirban; MCDOWELL, David L.Journal of nuclear materials. 2013, Vol 432, Num 1-3, pp 414-427, issn 0022-3115, 14 p.Article

NEW REFRIGERATION SYSTEM FOR THE LOW TEMPERATURE IRRADIATION FACILITY AT KUR.ATOBE K; OKADA M; YOSHIDA U et al.1976; ANNU. REP. RES. REACTOR INST. KYOTO UNIV.; JAP.; DA. 1976; VOL. 9; PP. 139-144; BIBL. 10 REF.Article

TSC DEFECT LEVEL IN SILICON PRODUCED BY IRRADIATION WITH MUONS OF GEV-ENERGY.HEIJNE HM; MULLER JC; SIFFERT P et al.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 29; NO 1; PP. 25-26; BIBL. 5 REF.Article

CHANNELING-EFFECT STUDY OF DEUTERON-INDUCED DAMAGE IN SI AND GE CRYSTALS.BAERI P; CAMPISANO SU; FOTI G et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 8; PP. 424-426; BIBL. 11 REF.Article

ELECTRON MICROSCOPE OBSERVATIONS OF PRECIPITATION IN BORON IMPLANTED SILICON.COMER JJ; ROOSILD SD.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 25; NO 4; PP. 275-277; BIBL. 6 REF.Article

MECHANISMS OF DEFECT FORMATION.SAIDOH M; TOWNSEND PD.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 27; NO 1-2; PP. 1-12; BIBL. 1 P.Article

PHOTOLUMINESCENCE MEASUREMENT OF ION-ETCHED GAAS SURFACE.NAMBA S; KAWABE M; KANZAKI N et al.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 1348-1351; BIBL. 11 REF.; (SYMP. ELECTRON ION PHOTON BEAM TECHNOL. 13. PROC.; COLORADO SPRINGS; 1975)Conference Paper

SPATIAL DEPENDENCE OF VOID GROWTH RATES IN THE IRRADIATION OF THIN FOILS. THEORY AND CALCULATIONS.GUTHRIE GL; STRAALSUND JL.1975; SCRIPTA METALLURG.; E.U.; DA. 1975; VOL. 9; NO 11; PP. 1149-1152; BIBL. 7 REF.Article